The present disclosure provides a method of manufacturing a semiconductor device having silicon nitride with a tensile stress, the method comprising: c1) introducing and pre-stabilizing NH3 gas and N2 gas; c2) introducing silane; c3) igniting the gases by a radio-frequency source; c4) depositing SiN; and c5) processing the SiN by using a nitrogen ion implantation. According to the present disclosure, the nitrogen content in the SiN film can be enhanced by the nitrogen ion implantation and impinging, thereby increasing the density of the film. In this way, the acid resistance of the SiN with tensile stress is enhanced, so that the SiN with tensile stress may be integrated in a dual-strained liner of a gate-last process, so as to effectively improve the properties and reliability of the device.