Invention Grant
- Patent Title: Forming isolated fins from a substrate
- Patent Title (中): 从基底形成隔离的翅片
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Application No.: US14050661Application Date: 2013-10-10
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Publication No.: US09418902B2Publication Date: 2016-08-16
- Inventor: Kangguo Cheng , Shom S. Ponoth , Balasubramanian Pranatharthiharan , Theodorus E. Standaert , Tenko Yamashita
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent George Blasiak
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L21/762 ; H01L27/12 ; H01L29/66
Abstract:
A method of isolating a semiconductor fin from an underlying substrate including forming a masking layer around a base portion of the fin, forming spacers on a top portion of the fin above the masking layer, removing the masking layer to expose the base portion of the fin, and converting the base portion of the fin to an isolation region that electrically isolates the fin from the substrate. The base portion of the fin may be converted to an isolation region by oxidizing the base portion of the fin, using for example a thermal oxidation process. While converting the base portion of the fin to an isolation region, the spacers prevent the top portion of the fin from also being converted.
Public/Granted literature
- US20150102409A1 FORMING ISOLATED FINS FROM A SUBSTRATE Public/Granted day:2015-04-16
Information query
IPC分类:
