Invention Grant
US09418939B2 Contact structure for NAND based non-volatile memory device and a method of manufacture
有权
基于NAND的非易失性存储器件的接触结构和制造方法
- Patent Title: Contact structure for NAND based non-volatile memory device and a method of manufacture
- Patent Title (中): 基于NAND的非易失性存储器件的接触结构和制造方法
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Application No.: US14539368Application Date: 2014-11-12
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Publication No.: US09418939B2Publication Date: 2016-08-16
- Inventor: Ming-Tsung Wu , Shih-Ping Hong
- Applicant: Macronix International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Fish & Richardson P.C.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L23/535 ; H01L27/115 ; H01L21/768
Abstract:
A NAND-based non-volatile memory contact structure includes a trench located adjacent to layered alternating conducting and insulating layers, the layers lining sides and bottom of the trench. A portion of the trench is removed to expose a surface in which electrical connections to the conducting layers are provided on one level.
Public/Granted literature
- US20160133568A1 Contact Structure for Nand Based Non-Volatile Memory Device and a Method of Manufacture Public/Granted day:2016-05-12
Information query
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