公开(公告)号：US09418939B2

公开(公告)日：2016-08-16

申请号：US14539368

申请日：2014-11-12

Applicant: Macronix International Co., Ltd.

Inventor： Ming-Tsung Wu ,  Shih-Ping Hong

IPC: H01L29/788 ,  H01L23/535 ,  H01L27/115 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/76895 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A NAND-based non-volatile memory contact structure includes a trench located adjacent to layered alternating conducting and insulating layers, the layers lining sides and bottom of the trench. A portion of the trench is removed to expose a surface in which electrical connections to the conducting layers are provided on one level.

Abstract translation: 基于NAND的非易失性存储器接触结构包括位于邻近分层交替导电和绝缘层的沟槽，所述层衬在沟槽的侧面和底部。 去除沟槽的一部分以暴露其中在一个层面上提供与导电层的电连接的表面。

公开(公告)号：US10217761B1

公开(公告)日：2019-02-26

申请号：US15821344

申请日：2017-11-22

Applicant: MACRONIX International Co., Ltd.

Inventor： Chun-Ling Chiang ,  Chun-Min Cheng ,  Ming-Tsung Wu

IPC: H01L27/105 ,  H01L27/11597 ,  H01L27/11582 ,  H01L29/49 ,  H01L21/02 ,  H01L21/311 ,  H01L29/51

Abstract: A semiconductor structure for three-dimensional memory device and a manufacturing method thereof are provided. The semiconductor structure is disposed on the substrate and has a plurality of openings penetrating through the semiconductor structure and extending into the substrate. The semiconductor structure includes a substrate, a stacked structure and an epitaxial layer. The stacked structure includes insulating layers and gate layers stacked alternatively. Each of the plurality of openings includes a first portion located above the surface of the substrate and a second portion located below the surface of the substrate. The aspect ratio of the second portion is more than 1. The epitaxial layer is disposed in each of the plurality of openings. The top surface of the epitaxial layer is between the top surface and the bottom surface of the i-th insulating layer as counted upward from the substrate, wherein i≥2.