发明授权
- 专利标题： Bipolar junction transistor
- 专利标题（中）： 双极结晶体管
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申请号： US14563363申请日： 2014-12-08
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公开(公告)号： US09419076B1公开(公告)日： 2016-08-16
- 发明人: Weimin Zhang , Yanzhong Xu
- 申请人： Altera Corporation
- 申请人地址： US CA San Jose
- 专利权人： Altera Corporation
- 当前专利权人： Altera Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/06 ; H01L29/737 ; H01L29/66 ; H01L21/306 ; H01L21/02 ; H01L29/16 ; H01L21/308 ; H01L29/739 ; H01L29/73
摘要：
A bipolar junction transistor (BJT) is formed in a thin (less than about 20 nanometers) segment of a semiconductive material such as silicon where a lower portion of the semiconductive material has doping of a first conductivity type and forms a collector and an upper portion of the semiconductive material has doping of a second conductivity type and forms a base. Either a metal or a polysilicon emitter is formed on the base. An illustrative method for forming the BJT comprises forming first and second layers of a semiconductive material having first and second conductivity types, respectively; forming a hard mask on an upper surface of the second layer; using the hard mask to etch first and second channels in the semiconductive material on first and second opposing sides of the hard mask; removing the hard mask; and forming an emitter on the upper surface of the second layer.
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