发明授权
US09419077B2 Semiconductor devices including protruding insulation portions between active fins
有权
半导体器件包括活性鳍片之间的突出绝缘部分
- 专利标题： Semiconductor devices including protruding insulation portions between active fins
- 专利标题（中）： 半导体器件包括活性鳍片之间的突出绝缘部分
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申请号： US14458955申请日： 2014-08-13
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公开(公告)号： US09419077B2公开(公告)日： 2016-08-16
- 发明人: Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- 申请人： Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel & Sibley, P.A.
- 优先权： KR10-2012-0138132 20121130
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/12 ; H01L29/06 ; H01L29/10 ; H01L29/417 ; H01L29/66 ; B82Y10/00 ; H01L27/088 ; H01L21/8234 ; H01L21/84 ; H01L29/775
摘要：
A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.
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