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US09424932B2 Nonvolatile memory device and programming method thereof 有权
非易失性存储器件及其编程方法

Nonvolatile memory device and programming method thereof
摘要:
A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.
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