发明授权
- 专利标题: Nonvolatile memory device and programming method thereof
- 专利标题(中): 非易失性存储器件及其编程方法
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申请号: US14567639申请日: 2014-12-11
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公开(公告)号: US09424932B2公开(公告)日: 2016-08-23
- 发明人: Yoon-Hee Choi , Sang-Wan Nam , Kang-Bin Lee
- 申请人: Yoon-Hee Choi , Sang-Wan Nam , Kang-Bin Lee
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2014-0012170 20140203
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C16/10 ; G11C16/04 ; G11C16/34 ; G11C7/04 ; H01L27/115
摘要:
A programming method is for programming a nonvolatile memory device including a plurality of strings disposed perpendicular to a substrate and connected between bitlines and a common source line. The programming method includes setting up the common source line to a predetermined voltage, floating the setup common source line, performing a program operation on memory cells connected to a selected wordline, and performing a verify operation on the memory cells.
公开/授权文献
- US20150221376A1 NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF 公开/授权日:2015-08-06
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