Invention Grant
- Patent Title: Methods for producing interconnects in semiconductor devices
- Patent Title (中): 用于在半导体器件中产生互连的方法
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Application No.: US14211602Application Date: 2014-03-14
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Publication No.: US09425092B2Publication Date: 2016-08-23
- Inventor: Ismail T. Emesh , Roey Shaviv , Mehul Naik
- Applicant: APPLIED Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED Materials, Inc.
- Current Assignee: APPLIED Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Christensen O'Connor Johnson Kindness PLLC
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/768 ; H01L23/532
Abstract:
A method for producing interconnects on a workpiece includes obtaining a workpiece substrate having a feature, depositing a conductive layer in the feature, to partially or fully fill the feature, depositing a copper fill to completely fill the feature if the feature is partially filled by the conductive layer, applying a copper overburden, thermally treating the workpiece, and removing the overburden to expose the substrate and the metalized feature.
Public/Granted literature
- US20140287577A1 METHODS FOR PRODUCING INTERCONNECTS IN SEMICONDUCTOR DEVICES Public/Granted day:2014-09-25
Information query
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