Invention Grant
US09425096B2 Air gap between tungsten metal lines for interconnects with reduced RC delay
有权
用于互连的钨金属线之间的空气间隙,具有减小的RC延迟
- Patent Title: Air gap between tungsten metal lines for interconnects with reduced RC delay
- Patent Title (中): 用于互连的钨金属线之间的空气间隙,具有减小的RC延迟
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Application No.: US14330950Application Date: 2014-07-14
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Publication No.: US09425096B2Publication Date: 2016-08-23
- Inventor: Shiqun Gu , Matthew Michael Nowak , Jeffrey Junhao Xu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/532 ; H01L23/522 ; H01L23/14 ; H01L23/498

Abstract:
Systems and methods are directed to a semiconductor device, which includes an integrated circuit, wherein the integrated circuit includes at least a first layer comprising two or more Tungsten lines and at least one air gap between at least two Tungsten lines, the air gaps to reduce capacitance. An interposer is coupled to the integrated circuit, to reduce stress on the two or more Tungsten lines and the at least one air gap. A laminated package substrate may be attached to the interposer such that the interposer is configured to absorb mechanical stress induced by mismatch in coefficient of thermal expansion (CTE) between the laminated package substrate and the interposer and protect the air gap from the mechanical stress.
Public/Granted literature
- US20160013133A1 AIR GAP BETWEEN TUNGSTEN METAL LINES FOR INTERCONNECTS WITH REDUCED RC DELAY Public/Granted day:2016-01-14
Information query
IPC分类: