发明授权
US09431216B2 ICP source design for plasma uniformity and efficiency enhancement
有权
ICP源设计用于等离子体均匀性和效率提高
- 专利标题： ICP source design for plasma uniformity and efficiency enhancement
- 专利标题（中）： ICP源设计用于等离子体均匀性和效率提高
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申请号： US14066631申请日： 2013-10-29
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公开(公告)号： US09431216B2公开(公告)日： 2016-08-30
- 发明人: Songlin Xu , Gang Shi , Tuqiang Ni
- 申请人： Advanced Micro-Fabrication Equipment Inc, Shanghai
- 申请人地址： CN Shanghai
- 专利权人： ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAI
- 当前专利权人： ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAI
- 当前专利权人地址： CN Shanghai
- 代理机构： Nixon Peabody LLP
- 代理商 Joseph Bach, Esq.
- 优先权： CN201110319250 20111019; CN201110319252 20111019; CN201210431839 20121101
- 主分类号： H01L21/306
- IPC分类号： H01L21/306 ; C23C16/00 ; H01J37/32
摘要：
An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plraity of gas injectors so as to redirect the flow of the processing gas.
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