A semiconductor package comprising: a semiconductor chip comprising a first surface on a first side of the semiconductor chip and a second surface on a second side of the semiconductor chip, wherein the first side and the second side are opposite sides of the semiconductor chip; a through-electrode penetrating the semiconductor chip between the first surface and the second surface; a passivation layer formed on the second surface of the semiconductor chip; and an electrode pad formed on an upper surface of the passivation layer and electrically connected to the through-electrode, wherein the passivation layer comprises a first passivation layer formed on the second surface of the semiconductor chip and a second passivation layer formed on an upper surface of the first passivation layer, and the electrode pad penetrates the second passivation layer to contact the upper surface of the first passivation layer.