发明授权
- 专利标题: Selective area heating for 3D chip stack
- 专利标题(中): 3D芯片堆叠的选择性区域加热
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申请号: US14705005申请日: 2015-05-06
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公开(公告)号: US09431366B2公开(公告)日: 2016-08-30
- 发明人: Mario J. Interrante , Katsuyuki Sakuma
- 申请人: International Business Machines Corporation
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 L. Jeffrey Kelly; Steven Meyers
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/56 ; H01L23/498 ; H01L21/48
摘要:
A method of forming a 3D package. The method may include joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat and first uniform pressure; joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure; heating the 3D package, the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where the first and second selective non-uniform heats being less that the reflow temperature of the first and second pluralities of solder bumps, respectively.
公开/授权文献
- US20150235986A1 SELECTIVE AREA HEATING FOR 3D CHIP STACK 公开/授权日:2015-08-20
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