INTEGRATED CIRCUIT BONDING WITH INTERPOSER DIE
    1.
    发明申请
    INTEGRATED CIRCUIT BONDING WITH INTERPOSER DIE 有权
    集成电路与插座式DIE连接

    公开(公告)号:US20160190071A1

    公开(公告)日:2016-06-30

    申请号:US14585323

    申请日:2014-12-30

    Abstract: A method of bonding components is disclosed. One embodiment of such a method includes applying both heat and pressure to a stack of components that includes an interposer with a reduced degree of warpage. Reducing the distance between the interposer and a first component of the stack of the components until a spacer prevents further reduction of that space. Then, cooling the stack of components while the pressure is maintained such that the degree of warpage of the interposer remains reduced.

    Abstract translation: 公开了粘接部件的方法。 这种方法的一个实施例包括将热和压力应用于包括具有降低的翘曲度的插入件的部件堆叠。 减小插入器与组件的堆叠的第一部件之间的距离,直到间隔件阻止该空间的进一步减小。 然后,在保持压力的同时冷却组件堆叠,使得插入件的翘曲程度仍然降低。

    Selective area heating for 3D chip stack

    公开(公告)号:US10262970B2

    公开(公告)日:2019-04-16

    申请号:US15215934

    申请日:2016-07-21

    Abstract: A method of forming a 3D package. The method may include joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality of solder bumps by applying a first selective non-uniform heat and first uniform pressure; joining a top chip to the interposer with the solid state diffusion of a second plurality of solder bumps by applying a second selective non-uniform heat and second uniform pressure; heating the 3D package, the first and second pluralities of solder bumps to a temperature greater than the reflow temperature of the first and second pluralities of solder bumps, where the second plurality of solder bumps achieves the reflow temperature before the first plurality of solder bumps, where the first and second selective non-uniform heats being less that the reflow temperature of the first and second pluralities of solder bumps, respectively.

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