发明授权
- 专利标题： Hybrid transformer structure on semiconductor devices
- 专利标题（中）： 半导体器件上的混合变压器结构
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申请号： US13684103申请日： 2012-11-21
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公开(公告)号： US09431473B2公开(公告)日： 2016-08-30
- 发明人: Chi Shun Lo , Je-Hsiung Lan , Mario Francisco Velez , Jonghae Kim
- 申请人： Qualcomm Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorporated
- 当前专利权人： QUALCOMM Incorporated
- 当前专利权人地址： US CA San Diego
- 代理商 Kenneth K. Vu; Paul Holdaway
- 主分类号： H01L27/08
- IPC分类号： H01L27/08 ; H01L21/337 ; H01F27/30 ; H01L49/02 ; H01F21/00 ; H01F19/04 ; H01L23/522 ; H01L23/64 ; H01F19/08 ; H01F27/28
摘要：
Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.
公开/授权文献
- US20140138792A1 HYBRID TRANSFORMER STRUCTURE ON SEMICONDUCTOR DEVICES 公开/授权日：2014-05-22
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