Invention Grant
- Patent Title: Hybrid transformer structure on semiconductor devices
- Patent Title (中): 半导体器件上的混合变压器结构
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Application No.: US13684103Application Date: 2012-11-21
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Publication No.: US09431473B2Publication Date: 2016-08-30
- Inventor: Chi Shun Lo , Je-Hsiung Lan , Mario Francisco Velez , Jonghae Kim
- Applicant: Qualcomm Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Kenneth K. Vu; Paul Holdaway
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L21/337 ; H01F27/30 ; H01L49/02 ; H01F21/00 ; H01F19/04 ; H01L23/522 ; H01L23/64 ; H01F19/08 ; H01F27/28
Abstract:
Several novel features pertain to a hybrid transformer formed within a semiconductor die having multiple layers. The hybrid transformer includes a first set of windings positioned on a first layer of the die. The first layer is positioned above a substrate of the die. The first set of windings includes a first port and a second port. The first set of windings is arranged to operate as a first inductor. The hybrid transformer includes a second set of windings positioned on a second layer of the die. The second layer is positioned above the substrate. The second set of windings includes a third port, a fourth port and a fifth port. The second set of windings is arranged to operate as a second inductor and a third inductor. The first set of windings and the second set of windings are arranged to operate as a vertical coupling hybrid transformer.
Public/Granted literature
- US20140138792A1 HYBRID TRANSFORMER STRUCTURE ON SEMICONDUCTOR DEVICES Public/Granted day:2014-05-22
Information query
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