发明授权
- 专利标题： High breakdown voltage semiconductor device having a resurf layer
- 专利标题（中）： 具有复层的高耐压电压半导体器件
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申请号： US12845176申请日： 2010-07-28
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公开(公告)号： US09431479B2公开(公告)日： 2016-08-30
- 发明人: Shigeto Honda , Atsushi Narazaki , Kaoru Motonami
- 申请人： Shigeto Honda , Atsushi Narazaki , Kaoru Motonami
- 申请人地址： JP Tokyo
- 专利权人： Mitsubishi Electric Corporation
- 当前专利权人： Mitsubishi Electric Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-235995 20091013
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/40 ; H01L29/66 ; H01L29/861 ; H01L29/16 ; H01L29/20 ; H01L29/78
摘要：
In a semiconductor device according to the present invention, an electrode layer and a recessed part are formed on a surface of a semiconductor substrate. Further, in the semiconductor substrate, a RESURF layer that is in contact with a bottom surface of the recessed part and the electrode layer is formed. In addition, an insulating film is formed on an upper surface of the semiconductor substrate so as to fill the recessed part. Moreover, a field plate electrode is formed on the insulating film above the recessed part.
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