Invention Grant
- Patent Title: Formation of finFET junction
- Patent Title (中): finFET结的形成
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Application No.: US14580274Application Date: 2014-12-23
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Publication No.: US09431485B2Publication Date: 2016-08-30
- Inventor: Shafaat Ahmed , Murshed M. Chowdhury , Aritra Dasgupta , Mohammad Hasanuzzaman , Shahrukh Akbar Khan , Joyeeta Nag
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GlobalFoundries, Inc.
- Current Assignee: GlobalFoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Yuanmin Cai
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L29/10 ; H01L29/66 ; H01L29/78
Abstract:
A method of forming a finFET structure having an ion implanted intermediate region next to the channel region of a finFET gate. The intermediate region is formed in a manner to reduce or eliminate migration of the dopant to undoped regions of the finFET thus forming abrupt finFET junction.
Public/Granted literature
- US20160181367A1 FORMATION OF FINFET JUNCTION Public/Granted day:2016-06-23
Information query
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