Invention Grant
US09431533B2 Method to enable higher carbon co-implants to improve device mismatch without degrading leakage
有权
使更高碳共同植入物改善器件失配而不降低泄漏的方法
- Patent Title: Method to enable higher carbon co-implants to improve device mismatch without degrading leakage
- Patent Title (中): 使更高碳共同植入物改善器件失配而不降低泄漏的方法
-
Application No.: US14732769Application Date: 2015-06-07
-
Publication No.: US09431533B2Publication Date: 2016-08-30
- Inventor: Ebenezer Eshun
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Frank D. Cimino
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/78 ; H01L21/265 ; H01L21/268 ; H01L29/66 ; H01L29/10
Abstract:
An integrated circuit containing an NMOS transistor with a boron-doped halo is formed by co-implanting carbon in at least three angled doses with the boron halo implants. The carbon is co-implanted at tilt angles within 5 degrees of the boron halo implant tilt angle. An implant energy of at least one of the angled carbon co-implant is greater than the implant energy of the boron halo implant. A total carbon dose of the angled carbon co-implants is at least 5 times a total boron dose of the boron halo implants. The NMOS transistor has a carbon concentration in the halo regions which is at least 5 times greater than the boron concentration in the halo regions. The co-implanted carbon extends under the gate of the NMOS transistor.
Public/Granted literature
- US20150364600A1 METHOD TO ENABLE HIGHER CARBON CO-IMPLANTS TO IMPROVE DEVICE MISMATCH WITHOUT DEGRADING LEAKAGE Public/Granted day:2015-12-17
Information query
IPC分类:
