发明授权
- 专利标题: Non-volatile memory storage for multi-channel memory system
- 专利标题(中): 用于多通道存储系统的非易失性存储器
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申请号: US14302292申请日: 2014-06-11
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公开(公告)号: US09436600B2公开(公告)日: 2016-09-06
- 发明人: Hyun Lee
- 申请人: Netlist, Inc.
- 申请人地址: KR Seocho-gu
- 专利权人: SVIC No. 28 New Technology Business Investment L.L.P.
- 当前专利权人: SVIC No. 28 New Technology Business Investment L.L.P.
- 当前专利权人地址: KR Seocho-gu
- 代理机构: Nixon Peabody LLP
- 代理商 Khaled Shami
- 主分类号: G06F12/02
- IPC分类号: G06F12/02 ; G06F12/08
摘要:
A memory system that has a multi-channel volatile memory subsystem is coupled to a non-volatile memory subsystem to provide independent, configurable backup of data. The volatile memory subsystem has one or more main memory modules that use a form of volatile memory such as DRAM memory, for which the NV subsystem provides selective persistent backup. The main memory modules are dual in-line memory modules or DIMMs using DDR SDRAM memory devices. The non-volatile memory subsystem (NV backup) includes an NV controller and non-volatile memory NVM. The NV backup can also include a memory cache to aid with handling and storage of data. In certain embodiments, the NV controller and the non-volatile memory are coupled to the one or more DIMM channels of the main memory via associated signal lines. Such signal lines can be, for example, traces on a motherboard, and may include one or more signal buses for conveying data, address, and/or control signals. The NV controller and the non-volatile memory can be mounted on the motherboard.
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