- 专利标题： Optoelectronic semiconductor device
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申请号： US12562917申请日： 2009-09-18
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公开(公告)号： US09437780B2公开(公告)日： 2016-09-06
- 发明人: Tsun-Kai Ko , Schang-Jing Hon , Chien-Kai Chung , Hui-Chen Yeh , An-Ju Lin , Chien-Fu Shen , Chen Ou
- 申请人： Tsun-Kai Ko , Schang-Jing Hon , Chien-Kai Chung , Hui-Chen Yeh , An-Ju Lin , Chien-Fu Shen , Chen Ou
- 申请人地址： TW Hsinchu
- 专利权人： EPISTAR CORPORATION
- 当前专利权人： EPISTAR CORPORATION
- 当前专利权人地址： TW Hsinchu
- 代理机构： Muncy, Geissler, Olds & Lowe, P.C.
- 优先权： TW97135935A 20080918; TW97135936A 20080918; TW98118503A 20090603
- 主分类号： H01L33/38
- IPC分类号： H01L33/38 ; H01L33/14 ; H01L33/22 ; H01L33/42 ; H01L33/44
摘要：
An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.
公开/授权文献
- US09508902B2 Optoelectronic semiconductor device 公开/授权日：2016-11-29
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