Invention Grant
- Patent Title: Passivated microelectromechanical structures and methods
- Patent Title (中): 钝化微机电结构和方法
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Application No.: US14724374Application Date: 2015-05-28
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Publication No.: US09440848B2Publication Date: 2016-09-13
- Inventor: Teruo Sasagawa , Junghun Chae , Jasper Lodewyk Steyn , Takeshi Hara , Asahi Yamato
- Applicant: Pixtronix, Inc. , Sharp Corporation, Sharp Kabushiki Kaisha
- Applicant Address: US CA San Diego JP Osaka
- Assignee: Pixtronix, Inc.,Sharp Corporation, Sharp Kabushiki Kaisha
- Current Assignee: Pixtronix, Inc.,Sharp Corporation, Sharp Kabushiki Kaisha
- Current Assignee Address: US CA San Diego JP Osaka
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: G01P15/08
- IPC: G01P15/08 ; B81C1/00

Abstract:
This disclosure provides systems, methods and apparatus including devices that include layers of passivation material covering at least a portion of an exterior surface of a thin film component within a microelectromechanical device. The thin film component may include an electrically conductive layer that connects via an anchor to a conductive surface on a substrate. The disclosure further provides processes for providing a first layer of passivation material on an exterior surface of a thin film component and for electrically connecting that thin film component to a conductive surface on a substrate. The disclosure further provides processes for providing a second layer of passivation material on any exposed surfaces of the thin film component after release of the microelectromechanical device.
Public/Granted literature
- US20160090299A1 PASSIVATED MICROELECTROMECHANICAL STRUCTURES AND METHODS Public/Granted day:2016-03-31
Information query
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