- 专利标题： Thin film transistor panel having an etch stopper on semiconductor
-
申请号： US14799060申请日： 2015-07-14
-
公开(公告)号： US09443877B2公开(公告)日： 2016-09-13
- 发明人: Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- 申请人： Samsung Display Co., Ltd.
- 申请人地址： KR Yongin-si
- 专利权人： Samsung Display Co., Ltd.
- 当前专利权人： Samsung Display Co., Ltd.
- 当前专利权人地址： KR Yongin-si
- 代理机构： H.C. Park & Associates, PLC
- 优先权： KR10-2010-0012957 20100211
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; H01L31/036 ; H01L27/12 ; H01L21/4757 ; H01L21/441 ; H01L21/475 ; H01L29/786 ; H01L29/66
摘要：
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
公开/授权文献
信息查询
IPC分类:
