- Patent Title: Thin film transistor panel having an etch stopper on semiconductor
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Application No.: US14799060Application Date: 2015-07-14
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Publication No.: US09443877B2Publication Date: 2016-09-13
- Inventor: Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2010-0012957 20100211
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L27/12 ; H01L21/4757 ; H01L21/441 ; H01L21/475 ; H01L29/786 ; H01L29/66
Abstract:
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
Public/Granted literature
- US20150318312A1 THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR Public/Granted day:2015-11-05
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