摘要:
A display substrate including a lower common electrode disposed on a substrate, an insulating layer disposed on the lower common electrode, a gate pattern including a gate electrode disposed on the insulating layer and a common electrode contact part and a direct contact part spaced apart from the gate electrode, a gate insulating layer disposed on the gate pattern, a semiconductor layer disposed on the gate insulating layer, an etch stopping layer disposed on the gate insulating layer, source and drain electrodes disposed on the etch stopping layer, pixel part extending from the source and drain electrodes, a first conductive layer connected to the common electrode contact part, a second conductive layer connected to the direct contact part, and a passivation layer disposed on the source and drain electrodes, the first conductive layer, and the second conductive layer.
摘要:
A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent substrate, disposing a color filter material in the plurality of trenches to form a color filter layer, and forming a transparent electrode on the transparent substrate including the color filter layer therein.
摘要:
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要:
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要:
Disclosed are a display substrate, of which productivity is improved by decreasing five mask (M) processes utilized for fabricating the display substrate used in a liquid crystal display device in a horizontal field (Plane to Line Switching (PLS)) mode to four mask processes, and a method of fabricating the same.
摘要:
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要:
A display substrate including a lower common electrode disposed on a substrate, an insulating layer disposed on the lower common electrode, a gate pattern including a gate electrode disposed on the insulating layer and a common electrode contact part and a direct contact part spaced apart from the gate electrode, a gate insulating layer disposed on the gate pattern, a semiconductor layer disposed on the gate insulating layer, an etch stopping layer disposed on the gate insulating layer, source and drain electrodes disposed on the etch stopping layer, pixel part extending from the source and drain electrodes, a first conductive layer connected to the common electrode contact part, a second conductive layer connected to the direct contact part, and a passivation layer disposed on the source and drain electrodes, the first conductive layer, and the second conductive layer.
摘要:
A display substrate and its fabricating method have been disclosed. In a horizontal-field-mode liquid crystal display device, while maintaining five mask processes, additional direct contact has been formed to implement a narrow bezel.
摘要:
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.