A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).