公开(公告)号：US09673193B2

公开(公告)日：2017-06-06

申请号：US14902519

申请日：2014-08-19

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shuo Zhang ,  Qiang Rui ,  Genyi Wang ,  Xiaoshe Deng

IPC: H01L27/06 ,  H01L29/66 ,  H01L29/739 ,  H01L21/3065 ,  H01L21/265 ,  H01L21/304 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L27/0664 ,  H01L21/263 ,  H01L21/26513 ,  H01L21/304 ,  H01L21/3065 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/7395

Abstract: A manufacturing method for reverse conducting insulated gate bipolar transistor, the manufacturing method is characterized by the use of polysilicon for filling in grooves on the back of a reverse conducting insulated gate bipolar transistor. The parameters of reverse conducting diodes on the back of the reverse conducting insulated gate bipolar transistor can be controlled simply by controlling the doping concentration of the polysilicon accurately, indicating relatively low requirements for process control. The reverse conducting insulated gate bipolar transistor manufacturing method is relatively low in requirements for process control and relatively small in manufacturing difficulty.

公开(公告)号：US09666682B2

公开(公告)日：2017-05-30

申请号：US14902302

申请日：2014-09-02

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Wanli Wang ,  Xiaoshe Deng ,  Genyi Wang ,  Qiang Rui

IPC: H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L21/268 ,  H01L21/324 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L21/308

CPC classification number: H01L29/66333 ,  H01L21/26513 ,  H01L21/268 ,  H01L21/308 ,  H01L21/3247 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/41716 ,  H01L29/7395

Abstract: A reverse conducting insulated gate bipolar transistor (IGBT) manufacturing method, comprising the following steps: providing a substrate having an IGBT structure formed on the front surface thereof; implanting P+ ions onto the back surface of the substrate; forming a channel on the back surface of the substrate through photolithography and etching processes; planarizing the back surface of the substrate through a laser scanning process to form P-type and N-type interval structures; and forming a back surface collector by conducting a back metalizing process on the back surface of the substrate. Laser scanning process can process only the back surface structure requiring annealing, thus solve the problem of the front surface structure of the reverse conducting IGBT restricting back surface annealing to a low temperature, improving the P-type and N-type impurity activation efficiency in the back surface structure of the reverse conducting IGBT, and enhancing the performance of the reverse conducting IGBT.

公开(公告)号：US09620615B2

公开(公告)日：2017-04-11

申请号：US14902516

申请日：2014-07-29

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaoshe Deng ,  Qiang Rui ,  Shuo Zhang ,  Genyi Wang

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/739 ,  H01L21/265 ,  H01L21/311 ,  H01L29/06

CPC classification number: H01L29/66333 ,  H01L21/26513 ,  H01L21/31111 ,  H01L29/0611 ,  H01L29/7395

Abstract: An insulated gate bipolar transistor (IGBT) manufacturing method comprises the following steps: providing a semiconductor substrate of a first conducting type, the semiconductor substrate having a first major surface and a second major surface (100); forming a field-stop layer of a second conducting type on the first major surface of the semiconductor substrate (200); growing an oxide layer on the field-stop layer (300); removing the oxide layer from the field-stop layer (400); forming an epitaxial layer on the field-stop layer from which the oxide layer has been removed; and then manufacturing an IGBT on the epitaxial layer (600). Before regular manufacturing of an IGBT, the surface defects of a substrate material are eliminated as many as possible before epitaxy is formed, and the quality of an epitaxial layer is improved, thereby improving the quality of the whole IGBT.

公开(公告)号：US09607851B2

公开(公告)日：2017-03-28

申请号：US14411978

申请日：2013-07-25

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Qiang Rui ,  Shuo Zhang ,  Genyi Wang ,  Xiaoshe Deng

IPC: H01L21/311 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/321

CPC classification number: H01L21/31116 ,  H01L21/32105 ,  H01L21/32137 ,  H01L29/66325 ,  H01L29/66333

Abstract: Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control.

公开(公告)号：US09443926B2

公开(公告)日：2016-09-13

申请号：US14901606

申请日：2014-06-06

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shuo Zhang ,  Qiang Rui ,  Xiaoshe Deng ,  Genyi Wang

IPC: H01L29/74 ,  H01L29/06 ,  H01L29/66 ,  H01L29/739 ,  H01L23/528 ,  H01L23/532 ,  H01L23/31

CPC classification number: H01L29/0607 ,  H01L23/3157 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53219 ,  H01L23/53247 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/7393 ,  H01L29/7395

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method thereof. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer (1) departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure (10) is provided with a back-surface metal layer (12). A plurality of polysilicon filling structures (11) which penetrate into the electric field stop layer (1) from the back-surface P-type structure (10) are formed in the active region (100).

Abstract translation: 场阻反向导通绝缘栅双极晶体管及其制造方法。 晶体管包括端子结构（200）和有源区（100）。 场阻反向导通绝缘栅双极晶体管的底层是N型衬垫，衬垫的背面设置有N型电场停止层（1），电场停止层的一个表面 在背衬P型结构（10）的背面设置有背面金属层（12）的背面P型结构（10）的表面。 在有源区（100）中形成有从背面P型结构（10）贯穿电场停止层（1）的多个多晶硅填充结构（11）。

公开(公告)号：US20150155182A1

公开(公告)日：2015-06-04

申请号：US14411978

申请日：2013-07-25

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Qiang Rui ,  Shuo Zhang ,  Genyi Wang ,  Xiaoshe Deng

IPC: H01L21/311 ,  H01L29/66

CPC classification number: H01L21/31116 ,  H01L21/32105 ,  H01L21/32137 ,  H01L29/66325 ,  H01L29/66333

Abstract: Disclosed is a method for removing a polysilicon protection layer (12) on a back face of an IGBT having a field stop structure (10). The method comprises thermally oxidizing the polysilicon protection layer (12) on the back face of the IGBT until the oxidation is terminated on a gate oxide layer (11) located above the polysilicon protection layer (12) to form a silicon dioxide layer (13), and removing the formed silicon dioxide layer (13) and the gate oxide layer (11) by a dry etching process. The method for removing the protection layer is easier to control.

Abstract translation: 公开了一种在具有场停止结构（10）的IGBT的背面上去除多晶硅保护层（12）的方法。 该方法包括在IGBT的背面上热氧化多晶硅保护层（12），直到在位于多晶硅保护层（12）上方的栅极氧化物层（11）上终止氧化以形成二氧化硅层（13） ，并通过干式蚀刻工艺除去形成的二氧化硅层（13）和栅极氧化物层（11）。 去除保护层的方法更容易控制。

公开(公告)号：US10096699B2

公开(公告)日：2018-10-09

申请号：US14392251

申请日：2014-06-05

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Shuo Zhang ,  Qiang Rui ,  Genyi Wang ,  Xiaoshe Deng

IPC: H01L29/73 ,  H01L21/02 ,  H01L29/739 ,  H01L29/66 ,  H01L29/06 ,  H01L29/08 ,  H01L21/265 ,  H01L21/28 ,  H01L21/285 ,  H01L21/311 ,  H01L21/324 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49

Abstract: A field-stop reverse conducting insulated gate bipolar transistor and a manufacturing method therefor. The transistor comprises a terminal structure (200) and an active region (100). An underlayment of the field-stop reverse conducting insulated gate bipolar transistor is an N-type underlayment, the back surface of the underlayment is provided with an N-type electric field stop layer (1), one surface of the electric field stop layer departing from the underlayment is provided with a back-surface P-type structure (10), and the surface of the back-surface P-type structure is provided with a back-surface metal layer (12). A plurality of notches (11) which penetrate through the back-surface P-type structure (10) from the back-surface metal layer (12) to the electric field stop layer (1) are formed in the active region (100), and metals of the back-surface metal layer (12) are filled into the notches (11) to form a metal structure which extends into the electric field stop layer (1).

公开(公告)号：US09595520B2

公开(公告)日：2017-03-14

申请号：US14901622

申请日：2014-06-09

Applicant: CSMC TECHNOLOGIES FAB1 CO., LTD.

Inventor： Xiaoshe Deng ,  Shuo Zhang ,  Qiang Rui ,  Genyi Wang

IPC: H01L29/74 ,  H01L27/07 ,  H01L29/66 ,  H01L29/739 ,  H01L29/06 ,  H01L29/08 ,  H01L21/8249 ,  H01L29/868 ,  H01L29/40

CPC classification number: H01L27/0727 ,  H01L21/8249 ,  H01L29/0619 ,  H01L29/0684 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/66333 ,  H01L29/7395 ,  H01L29/868

Abstract: An insulated gate bipolar translator (IGBT) with a built-in diode and a manufacturing method thereof are provided. The IGBT comprises: a semiconductor substrate (1) of the first conduction type which has a first major surface (1S1) and a second major surface (1S2), wherein the semiconductor substrate (1) comprises an active region (100) and a terminal protection area (200) which is located at the outer side of the active region; an insulated gate transistor unit which is formed at the side of the first major surface (1S1) of the active region (100), wherein a channel of the first conduction type is formed thereon during the conduction thereof; and first semiconductor layers (10) of the first conduction type and second semiconductor layers (11) of the second conduction type of the active region, which are formed at the side of the second major surface (1S2) of the semiconductor substrate (1) alternately, wherein the IGBT only comprises the second semiconductor layers (11) in the terminal protection area (200) which is located at the side of the second major surface (1S2) of the semiconductor substrate (1).

Abstract translation: 提供了具有内置二极管的绝缘栅双极转换器（IGBT）及其制造方法。 IGBT包括：具有第一主表面（1S1）和第二主表面（1S2）的第一导电类型的半导体衬底（1），其中半导体衬底（1）包括有源区（100）和端子 保护区域（200），其位于有源区域的外侧; 绝缘栅晶体管单元，其形成在有源区（100）的第一主表面（1S1）侧，其中在其导通期间在其上形成第一导电类型的沟道; 以及形成在半导体衬底（1）的第二主表面（1S2）侧的第一导电类型和第二导电类型的有源区的第二半导体层（11）的第一半导体层（10） 交替地，其中IGBT仅包括端子保护区域（200）中位于半导体衬底（1）的第二主表面（1S2）侧的第二半导体层（11）。