- 专利标题： Method of fabricating fin-field effect transistors (finFETs) having different fin widths
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申请号： US15013647申请日： 2016-02-02
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公开(公告)号： US09443935B2公开(公告)日： 2016-09-13
- 发明人: Chang Woo Oh , Shincheol Min , Jongwook Lee , Choongho Lee
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR
- 代理机构： Myers Bigel & Sibley, PA
- 优先权： KR10-2012-0027735 20120319
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/10 ; H01L29/66 ; H01L21/02 ; H01L21/302 ; H01L21/308 ; H01L21/8238 ; H01L27/092 ; H01L29/78 ; H01L29/06
摘要：
Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
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