Invention Grant
- Patent Title: Method of fabricating fin-field effect transistors (finFETs) having different fin widths
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Application No.: US15013647Application Date: 2016-02-02
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Publication No.: US09443935B2Publication Date: 2016-09-13
- Inventor: Chang Woo Oh , Shincheol Min , Jongwook Lee , Choongho Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, PA
- Priority: KR10-2012-0027735 20120319
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/10 ; H01L29/66 ; H01L21/02 ; H01L21/302 ; H01L21/308 ; H01L21/8238 ; H01L27/092 ; H01L29/78 ; H01L29/06
Abstract:
Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.
Public/Granted literature
- US20160155804A1 Method of Fabricating Fin-Field Effect Transistors (FINFETS) Having Different Fin Widths Public/Granted day:2016-06-02
Information query
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