Invention Grant
US09446948B1 Apparatus and method of forming a MEMS device with etch channels
有权
用蚀刻通道形成MEMS器件的装置和方法
- Patent Title: Apparatus and method of forming a MEMS device with etch channels
- Patent Title (中): 用蚀刻通道形成MEMS器件的装置和方法
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Application No.: US14632277Application Date: 2015-02-26
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Publication No.: US09446948B1Publication Date: 2016-09-20
- Inventor: Thomas Kieran Nunan
- Applicant: Analog Devices, Inc.
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Sunstein Kann Murphy & Timbers LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B81C1/00

Abstract:
A method of fabricating a MEMS device provides a device substrate, forms a plurality of trenches in/on the substrate, and forms a sacrificial material on the substrate (e.g., growing or depositing the sacrificial material) to form a plurality of etch channels. Each trench defines one etch channel, and each etch channel forms an interior configured to channel etchant. The method also bonds a handle substrate to the sacrificial material of the device substrate, and removes at least a portion of the sacrificial material.
Public/Granted literature
- US20160251214A1 Apparatus and Method of Forming a MEMS Device with Etch Channels Public/Granted day:2016-09-01
Information query
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