Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12978770Application Date: 2010-12-27
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Publication No.: US09448433B2Publication Date: 2016-09-20
- Inventor: Shunpei Yamazaki , Jun Koyama , Yoshiharu Hirakata
- Applicant: Shunpei Yamazaki , Jun Koyama , Yoshiharu Hirakata
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2009-298290 20091228
- Main IPC: G09G5/42
- IPC: G09G5/42 ; G02F1/1335 ; G09G3/34

Abstract:
An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed.
Public/Granted literature
- US20110157252A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2011-06-30
Information query
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