Invention Grant
- Patent Title: Techniques for probabilistic dynamic random access memory row repair
- Patent Title (中): 概率动态随机存取行修复技术
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Application No.: US14132987Application Date: 2013-12-18
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Publication No.: US09449671B2Publication Date: 2016-09-20
- Inventor: John H. Crawford , Brian S. Morris , Sreenivas Mandava , Raj K. Ramanujan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/406 ; G06F13/16

Abstract:
Examples are disclosed for probabilistic dynamic random access memory (DRAM) row repair. In some examples, using a row hammer limit for DRAM and a maximum activation rate for the DRAM a probabilistic row hammer detection value may be determined. The probabilistic row hammer detection value may then be used such that a probability is acceptably low that a given activation to an aggressor row of the DRAM causes the row hammer limit to be exceeded before a scheduled row refresh is performed on one or more victim rows associated with the aggressor row. Other examples are described and claimed.
Public/Granted literature
- US20140281206A1 Techniques for Probabilistic Dynamic Random Access Memory Row Repair Public/Granted day:2014-09-18
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