Invention Grant
- Patent Title: Programming schemes for multi-level analog memory cells
- Patent Title (中): 多级模拟存储单元的编程方案
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Application No.: US14173965Application Date: 2014-02-06
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Publication No.: US09449705B2Publication Date: 2016-09-20
- Inventor: Ofir Shalvi , Naftali Sommer , Dotan Sokolov , Yoav Kasorla
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C11/56 ; G11C16/34

Abstract:
A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.
Public/Granted literature
- US20140157090A1 Programming Schemes for Multi-Level Analog Memory Cells Public/Granted day:2014-06-05
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