Invention Grant
US09449998B2 Manufacturing method of pixel structure with data line, scan line and gate electrode formed on the same layer
有权
具有数据线，扫描线和栅电极的像素结构的制造方法形成在同一层上
- Patent Title: Manufacturing method of pixel structure with data line, scan line and gate electrode formed on the same layer
- Patent Title (中): 具有数据线，扫描线和栅电极的像素结构的制造方法形成在同一层上
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Application No.: US14977562Application Date: 2015-12-21
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Publication No.: US09449998B2Publication Date: 2016-09-20
- Inventor: Te-Chun Huang , Hsiang-Lin Lin , Kuo-Yu Huang
- Applicant: Au Optronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100148582A 20111223
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; H01L27/12 ; G02F1/1333 ; G02F1/1345 ; G02F1/1362 ; G02F1/136
Abstract:
A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain.
Public/Granted literature
- US20160111446A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-04-21
Information query
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