Abstract:
An active device substrate and a manufacturing method thereof are provided. The active device substrate includes a substrate, first and second scan lines, a data line, first and second active devices and first and second pixel electrodes. The first active device includes a first semiconductor channel layer, a first gate, a first source and a first drain. The first gate is electrically connected to the first scan line. The first pixel electrode is electrically connected to the first drain. The second active device includes a second semiconductor channel layer, a second gate and a second drain. The first semiconductor channel layer is connected to a source region of the second semiconductor channel layer. The first semiconductor channel layer and the second semiconductor channel layer belong to same layer. The second gate is electrically connected to the second scan line. The second pixel electrode is electrically connected to the second drain.
Abstract:
A pixel array substrate including a substrate, an active device, a planarization layer, a first conductive layer, a first insulation layer and a second conductive layer is provided. The active device is disposed on the substrate. The planarization layer covers the active device and has a first opening. The first conductive layer is disposed on the planarization layer and is electrically connected with a first end of the active device. The first insulation layer is disposed on the first conductive layer. The second conductive layer is disposed on the first insulation layer. The first conductive layer and the second conductive layer cover a side surface of the first opening of the planarization layer.
Abstract:
A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain.
Abstract:
A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain.
Abstract:
A pixel array substrate including a substrate, an active device, a planarization layer, a first conductive layer, a first insulation layer and a second conductive layer is provided. The active device is disposed on the substrate. The planarization layer covers the active device and has a first opening. The first conductive layer is disposed on the planarization layer and is electrically connected with a first end of the active device. The first insulation layer is disposed on the first conductive layer. The second conductive layer is disposed on the first insulation layer. The first conductive layer and the second conductive layer cover a side surface of the first opening of the planarization layer.
Abstract:
A pixel structure including an active device, a first protection layer, a first electrode, an isolator, a second protection layer and a second electrode is provided. The active device includes a gate, a source and a drain. The first protection layer covers the active device and has a first opening above the drain. The first electrode is disposed above the first protection layer. The first electrode has a side wall corresponding to the first opening. The isolator covers the side wall of the first electrode. The second protection layer covers the first electrode. The second electrode is disposed on the second protection layer, electrically connected to the drain through the first opening, and electrically isolated from the first electrode by the second protection layer and the isolator.
Abstract:
A display panel, which has a display region and a non-display region, includes an active array substrate and an opposite substrate disposed opposite to the active array substrate. The active array substrate includes a substrate, a pixel array, and a driving circuit. The pixel array and the driving circuit are disposed on the substrate, wherein the pixel array is located in the display region and the driving circuit is located in the non-display region. The driving circuit includes a first transparent electrode layer, a second transparent electrode layer, and a dielectric layer. The dielectric layer is located between the first transparent electrode layer and the second transparent electrode layer, wherein the first transparent electrode layer and the second transparent electrode layer are electrically coupled to each other to form at least one transparent capacitor.
Abstract:
A circuit substrate includes a substrate, an active device, a first signal line, a second signal line, a shielding electrode, a data line, a pixel electrode, and a common electrode. The first signal line is electrically connected to the active device, and includes a main portion and a connection portion connected to the main portion. The main portion extends along a first direction. The second signal line extends along a second direction. The second signal line is electrically connected to the connection portion. The shielding electrode overlaps the connection portion in a normal direction of the substrate. The shielding electrode and the second signal line belong to a same conductive layer. The data line is electrically connected to the active device. The common electrode is electrically connected to the shielding electrode.
Abstract:
A photosensitive element and a manufacturing method thereof are provided. The manufacturing method of the photosensitive element includes successively depositing a second conductive layer, a photosensitive material layer, and a first top electrode material layer on a substrate; forming a first patterned photoresist layer on the first top electrode material layer; patterning the first top electrode material layer by using the first patterned photoresist layer as a mask to form a first top electrode; removing the first patterned photoresist layer; patterning the photosensitive material layer by using the first top electrode as a mask to form a photosensitive layer; forming an insulation layer having an opening on the first top electrode; and forming a second top electrode on the insulation layer, and the second top electrode is electrically connected to the first top electrode via the opening.
Abstract:
A display panel including first and second pixel structures and a light shielding pattern layer is provided. The first pixel structure includes a first pixel electrode including first pixel electrode bars, wherein a first maximum spacing is formed between any two adjacent first pixel electrode bars of the first pixel structure. The second pixel structure includes a second pixel electrode including second pixel electrode bars, wherein a second maximum spacing which is larger than the first maximum spacing is formed between two adjacent second pixel electrode bars of the second pixel structure. The light shielding pattern layer has first and second light shielding portions. The area of the second light shielding portion is larger than the area of the first light shielding portion. The first pixel electrode is close to the second light shielding portion and the second pixel electrode is away from the second light shielding portion.