Invention Grant
- Patent Title: Plasma enhanced thermal evaporator
- Patent Title (中): 等离子增强热蒸发器
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Application No.: US14294644Application Date: 2014-06-03
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Publication No.: US09450135B2Publication Date: 2016-09-20
- Inventor: Byung-sung Kwak , Kaushal K. Singh , Stefan Bangert , Nety M. Krishna
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L31/18
- IPC: H01L31/18

Abstract:
The present invention generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.
Public/Granted literature
- US20140287550A1 PLASMA ENHANCED THERMAL EVAPORATOR Public/Granted day:2014-09-25
Information query
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