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公开(公告)号:US11905589B2
公开(公告)日:2024-02-20
申请号:US16998872
申请日:2020-08-20
Applicant: Applied Materials, Inc.
Inventor: Andreas Lopp , Stefan Bangert , Wolfgang Buschbeck
CPC classification number: C23C14/26 , C23C14/24 , C23C14/541 , C23C14/562
Abstract: One or more heating assemblies for a material deposition apparatus for pre-heating a substrate before entering a material deposition area and/or for post-heating the substrate after exiting the material deposition area are described.
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公开(公告)号:US11732345B2
公开(公告)日:2023-08-22
申请号:US17332845
申请日:2021-05-27
Applicant: Applied Materials, Inc.
Inventor: Stefan Bangert , Andreas Lopp
CPC classification number: C23C14/24 , B05B12/16 , B05C21/005 , C23C14/042 , C23C14/16 , C23C14/54 , H01J37/32752
Abstract: A vapor deposition apparatus is described. The vapor deposition apparatus includes a substrate support for supporting a substrate to be coated; a vapor source with a plurality of nozzles for directing vapor toward the substrate support through a vapor propagation volume; and a heatable shield extending from the vapor source toward the substrate support. The heatable shield surrounds the vapor propagation volume at least partially and includes an edge exclusion portion for masking areas of the substrate not to be coated. The substrate support may be a rotatable drum with a curved drum surface, and the vapor deposition apparatus may be configured to move the substrate on the curved drum surface past the vapor source in a circumferential direction.
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3.
公开(公告)号:US10546732B2
公开(公告)日:2020-01-28
申请号:US15033868
申请日:2013-11-05
Applicant: Applied Materials, Inc.
Inventor: Stefan Keller , Uwe Schüβler , Dieter Haas , Stefan Bangert
Abstract: A sputter deposition source for sputter deposition in a vacuum chamber is described. The source includes a wall portion of the vacuum chamber; a target providing a material to be deposited during the sputter deposition; an RF power supply for providing RF power to the target; a power connector for connecting the target with the RF power supply; and a conductor rod extending through the wall portion from inside of the vacuum chamber to outside of the vacuum chamber, wherein the conductor rod is connected to one or more components inside of the vacuum chamber and wherein the conductor rod is connected to the RF power supply outside of the vacuum chamber to generate a defined RF return path through the conductor rod.
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公开(公告)号:US12060634B2
公开(公告)日:2024-08-13
申请号:US17317115
申请日:2021-05-11
Applicant: Applied Materials, Inc.
Inventor: Stefan Bangert , Thomas Deppisch , Wolfgang Buschbeck
IPC: C23C14/54 , C23C14/50 , C23C14/56 , C23C16/458 , C23C16/46
CPC classification number: C23C14/541 , C23C14/505 , C23C14/562 , C23C16/4584 , C23C16/463
Abstract: A roller for transporting a flexible substrate is described. The roller includes a first coolant supply for cooling a first part of the roller and a second coolant supply for cooling a second part and a third part of the roller. The first part is provided between the second part and the third part. Additionally, a vacuum processing apparatus including a roller and a method of cooling a roller are described.
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5.
公开(公告)号:US11713506B2
公开(公告)日:2023-08-01
申请号:US16180800
申请日:2018-11-05
Applicant: Applied Materials, Inc.
Inventor: Stefan Keller , Uwe Schüssler , Jose Manuel Dieguez-Campo , Stefan Bangert , Byung-Sung Kwak
IPC: C23C16/448 , C23C14/24 , H01M4/38 , C23C14/54 , C23C14/14 , C23C16/06 , C23C16/455 , C23C16/52
CPC classification number: C23C16/4485 , C23C14/14 , C23C14/246 , C23C14/543 , C23C16/06 , C23C16/4557 , C23C16/45519 , C23C16/45561 , C23C16/45565 , C23C16/52 , H01M4/381
Abstract: A depositing arrangement for evaporation of a material is disclosed herein. The depositing arrangement has an alkali metal or alkaline earth metal for deposition of the material on a substrate. The deposition arrangement has a first chamber configured for liquefying the material; a valve being in fluid communication with the first chamber, and being downstream of the first chamber, wherein the valve is configured for control of the flow rate of the liquefied material through the valve. The deposition arrangement has an evaporation zone being in fluid communication with the valve, and being downstream of the valve, wherein the evaporation zone is configured for vaporizing the liquefied material; a heating unit to heat the material to higher temperatures before providing the liquid material in the evaporation zone; and one or more outlets for directing the vaporized material towards the substrate.
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公开(公告)号:US12049691B2
公开(公告)日:2024-07-30
申请号:US17332822
申请日:2021-05-27
Applicant: Applied Materials, Inc.
Inventor: Andreas Lopp , Stefan Bangert
CPC classification number: C23C14/542 , C23C14/24 , H01J37/32651
Abstract: A temperature-controlled shield for an evaporation source is described. The temperature-controlled shield is configured to provide a pre-heating zone or a post-cooling zone.
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公开(公告)号:US11906087B2
公开(公告)日:2024-02-20
申请号:US17025268
申请日:2020-09-18
Applicant: Applied Materials, Inc.
Inventor: Lukas Kremser , Andreas Sauer , Stefan Bangert
IPC: F16L23/20 , F16L23/036 , F16L23/032
CPC classification number: F16L23/20 , F16L23/032 , F16L23/036
Abstract: A flanged joint is described. The flanged joint has a first flange member with a first sealing surface and a second flange member with a second sealing surface. The flanged joint further has a hollow-metal gasket between the first flange member and the second flange member, and a spacer between the first flange member and the second flange member. The spacer defines a minimum distance between the first flange member and the second flange member. The flanged joint can be configured to seal a metal-conveying volume.
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公开(公告)号:US11718904B2
公开(公告)日:2023-08-08
申请号:US16422794
申请日:2019-06-26
Applicant: Applied Materials, Inc.
Inventor: Stefan Bangert , Tommaso Vercesi , Daniele Gislon , Oliver Heimel , Andreas Lopp , Dieter Haas
IPC: H01L21/67 , C23C14/04 , C23C16/04 , C23C16/458 , G03F1/38 , C23C14/56 , H01L21/673 , H01L21/677 , G01F1/42 , H10K71/16
CPC classification number: C23C14/042 , C23C14/56 , C23C16/042 , C23C16/4587 , G03F1/38 , H01L21/67346 , H01L21/67712 , G01F1/42 , H10K71/166
Abstract: A mask arrangement for masking a substrate in a processing chamber is provided. The mask arrangement includes a mask frame having one or more frame elements and is configured to support a mask device, wherein the mask device is connectable to the mask frame; and at least one actuator connectable to at least one frame element of the one or more frame elements, wherein the at least one actuator is configured to apply a force to the at least one frame element.
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公开(公告)号:US10483465B2
公开(公告)日:2019-11-19
申请号:US16300484
申请日:2016-05-10
Applicant: Applied Materials, Inc.
Inventor: Jose Manuel Dieguez-Campo , Stefan Bangert , Andreas Lopp , Harald Wurster , Dieter Haas
Abstract: A method of operating a deposition apparatus is provided. The method comprises: Deposition of an evaporated source material on a substrate by guiding the evaporated source material from one or more outlets of an evaporation source toward the substrate, wherein part of the evaporated source material is blocked by and attaches to a shielding device arranged between the one or more outlets and the substrate, followed by a cleaning of the shielding device by at least locally heating the shielding device for releasing at least part of the attached source material from the shielding device. According to a further aspect, a deposition apparatus is provided that can be operated according to the described methods.
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公开(公告)号:US09905723B2
公开(公告)日:2018-02-27
申请号:US15268185
申请日:2016-09-16
Applicant: Applied Materials, Inc.
Inventor: Byung-sung Kwak , Kaushal K. Singh , Stefan Bangert , Nety M. Krishna
IPC: H01L31/18 , H01L31/0392 , C23C16/455 , C23C16/448
CPC classification number: H01L31/18 , C23C16/4485 , C23C16/45565 , H01L31/03923
Abstract: The present disclosure generally provides a method for forming a photovoltaic device including evaporating a source material to form a large molecule processing gas and flowing the large molecule processing gas through a gas distribution showerhead and into a processing area of a processing chamber having a substrate therein. The method includes generating a small molecule processing gas, and reacting the small molecule processing gas with a film already deposited on a substrate surface to form a semiconductor film. Additionally, apparatuses that may use the methods are also provided to enable continuous inline CIGS type solar cell formation.
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