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US09454086B2 Programmable photolithography 有权
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Programmable photolithography
Abstract:
A method of programmable photolithography includes positioning (910) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated (920) with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern. The programmable photomask is separated (930) from the photoresist layer and the photoresist layer is developed (940) to create the predetermined pattern in the photoresist layer.
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