Invention Grant
- Patent Title: Programmable photolithography
- Patent Title (中): 可编程光刻
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Application No.: US14351465Application Date: 2012-10-15
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Publication No.: US09454086B2Publication Date: 2016-09-27
- Inventor: Rajesh Menon
- Applicant: University of Utah Research Foundation
- Applicant Address: US UT Salt Lake City
- Assignee: University of Utah Research Foundation
- Current Assignee: University of Utah Research Foundation
- Current Assignee Address: US UT Salt Lake City
- Agency: Thorpe North & Western, LLP
- International Application: PCT/US2012/060270 WO 20121015
- International Announcement: WO2013/056238 WO 20130418
- Main IPC: G03F7/20
- IPC: G03F7/20 ; H01L21/027

Abstract:
A method of programmable photolithography includes positioning (910) a programmable photomask in proximity to a photoresist layer on a sample. The programmable photomask is illuminated (920) with a plurality of different wavelengths of light simultaneously to expose the photoresist layer in a predetermined pattern. The programmable photomask is separated (930) from the photoresist layer and the photoresist layer is developed (940) to create the predetermined pattern in the photoresist layer.
Public/Granted literature
- US20140300877A1 PROGRAMMABLE PHOTOLITHOGRAPHY Public/Granted day:2014-10-09
Information query
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