Invention Grant
US09455014B1 Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems
有权
基于写入错误率(WER)调整电阻性存储器写入驱动器强度,以提高WER产量,以及相关方法和系统
- Patent Title: Adjusting resistive memory write driver strength based on write error rate (WER) to improve WER yield, and related methods and systems
- Patent Title (中): 基于写入错误率(WER)调整电阻性存储器写入驱动器强度,以提高WER产量,以及相关方法和系统
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Application No.: US14818809Application Date: 2015-08-05
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Publication No.: US09455014B1Publication Date: 2016-09-27
- Inventor: Kangho Lee , Taehyun Kim , Sungryul Kim , Seung Hyuk Kang , Jung Pill Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14 ; G11C11/15 ; G11C11/16 ; G11C29/44

Abstract:
Aspects for adjusting resistive memory write driver strength based on write error rate (WER) are disclosed. In one aspect, a write driver strength control circuit is provided to adjust a write current provided to a resistive memory based on a WER of the resistive memory. The write driver strength control circuit includes a tracking circuit configured to determine the WER of the resistive memory based on write operations performed on resistive memory elements. The write driver strength control circuit includes a write current calculator circuit configured to compare the WER to a target WER that represents the desired yield performance level of the resistive memory. A write current adjust circuit in the write driver strength control circuit is configured to adjust the write current based on this comparison. The write driver strength control circuit adjusts the write current to perform write operations while reducing write errors associated with breakdown voltage.
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