Invention Grant
- Patent Title: Programming methods and memories
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Application No.: US14633287Application Date: 2015-02-27
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Publication No.: US09455042B2Publication Date: 2016-09-27
- Inventor: Yijie Zhao , Akira Goda
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C16/34 ; G11C16/04 ; G11C16/10
Abstract:
Memory devices and programming methods for memories are disclosed, such as those adapted to program a memory using an increasing channel voltage for a first portion of programming, and an increasing but reduced channel voltage for a second portion of programming.
Public/Granted literature
- US20150170757A1 PROGRAMMING MEMORIES AND METHODS Public/Granted day:2015-06-18
Information query
