Invention Grant
US09455254B2 Methods of forming a combined gate and source/drain contact structure and the resulting device
有权
形成组合的栅极和源极/漏极接触结构的方法以及所得到的器件
- Patent Title: Methods of forming a combined gate and source/drain contact structure and the resulting device
- Patent Title (中): 形成组合的栅极和源极/漏极接触结构的方法以及所得到的器件
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Application No.: US14536243Application Date: 2014-11-07
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Publication No.: US09455254B2Publication Date: 2016-09-27
- Inventor: Ruilong Xie , Andre Labonte , Su Chen Fan , Balasubramanian S. Pranatharthi Haran
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L21/768 ; H01L27/088 ; H01L29/45 ; H01L23/528 ; H01L29/66 ; H01L21/311 ; H01L21/283 ; H01L29/417
Abstract:
One method disclosed herein includes, among other things, forming a gate cap layer above a recessed final gate structure and above recessed sidewall spacers, forming a recessed trench silicide region that is conductively coupled to the first source/drain region, the recessed trench silicide region having an upper surface that is positioned at a level that is below the recessed upper surface of the sidewall spacers, forming a combined contact opening in at least one layer of material that exposes a conductive portion of the recessed final gate structure and a portion of the trench silicide region, and forming a combined gate and source/drain contact structure in the combined contact opening.
Public/Granted literature
- US20160133623A1 METHODS OF FORMING A COMBINED GATE AND SOURCE/DRAIN CONTACT STRUCTURE AND THE RESULTING DEVICE Public/Granted day:2016-05-12
Information query
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