Invention Grant
- Patent Title: Image sensing device with interconnect layer gap
- Patent Title (中): 具有互连层间隙的图像感测装置
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Application No.: US14741561Application Date: 2015-06-17
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Publication No.: US09455292B2Publication Date: 2016-09-27
- Inventor: Jing-En Luan
- Applicant: STMICROELECTRONICS PTE LTD
- Applicant Address: SG Singapore
- Assignee: STMICROELECTRONICS PTE LTD
- Current Assignee: STMICROELECTRONICS PTE LTD
- Current Assignee Address: SG Singapore
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: CN201410537533 20141011
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146

Abstract:
An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR filter aligned with the image sensing surface opposite the interconnect layer. The image sensing device may include a flexible interconnect layer aligned with the interconnect layer and having a flexible substrate extending laterally outwardly from the interconnect layer, and electrically conductive traces on the flexible substrate. The image sensing device may also include solder bodies coupling the interconnect layer and the flexible interconnect layer and also defining a gap between the interconnect layer and the flexible interconnect layer.
Public/Granted literature
- US20160104738A1 IMAGE SENSING DEVICE WITH INTERCONNECT LAYER GAP AND RELATED METHODS Public/Granted day:2016-04-14
Information query
IPC分类: