Invention Grant
US09455386B2 Vertical light emitting devices with nickel silicide bonding and methods of manufacturing 有权
具有硅化镍结合的垂直发光器件及其制造方法

Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
Abstract:
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
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