Invention Grant
- Patent Title: Vertical light emitting devices with nickel silicide bonding and methods of manufacturing
- Patent Title (中): 具有硅化镍结合的垂直发光器件及其制造方法
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Application No.: US14456730Application Date: 2014-08-11
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Publication No.: US09455386B2Publication Date: 2016-09-27
- Inventor: Michael J. Bernhardt
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/40 ; H01L33/20 ; H01L33/42 ; H01L33/00

Abstract:
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
Public/Granted literature
- US20140346553A1 VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING Public/Granted day:2014-11-27
Information query
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