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1.发明申请公开(公告)号：US20250120232A1
公开(公告)日：2025-04-10
申请号：US18982201
申请日：2024-12-16
Applicant: Micron Technology, Inc.
Inventor： Michael J. Bernhardt
Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
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公开(公告)号：US20230387353A1
公开(公告)日：2023-11-30
申请号：US18359795
申请日：2023-07-26
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
CPC classification number: H01L33/38 , H01L31/02168 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58 , H01L2933/0091 , Y02E10/50
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US20200335665A1
公开(公告)日：2020-10-22
申请号：US16922940
申请日：2020-07-07
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein, in several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US10756236B2
公开(公告)日：2020-08-25
申请号：US16104857
申请日：2018-08-17
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L51/52 , H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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5.发明授权Vertical light emitting devices with nickel silicide bonding and methods of manufacturing 有权具有硅化镍结合的垂直发光器件及其制造方法公开(公告)号：US09455386B2
公开(公告)日：2016-09-27
申请号：US14456730
申请日：2014-08-11
Applicant: Micron Technology, Inc.
Inventor： Michael J. Bernhardt
CPC classification number: H01L33/62 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
Abstract translation: 这里描述了发光器件，组件和制造方法的各种实施例。 在一个实施例中，制造发光器件的方法包括形成发光结构，并且在发光结构上串联沉积阻挡材料，反射镜材料和接合材料。 接合材料含有镍（Ni）。 该方法还包括将发光结构放置在硅衬底上，其中接合材料与硅衬底接触并退火发光结构和硅衬底。 结果，在硅衬底和接合材料之间的界面处形成硅化镍（NiSi）材料，以将发光结构机械耦合到硅衬底。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20200274043A1
公开(公告)日：2020-08-27
申请号：US16862897
申请日：2020-04-30
Applicant: Micron Technology, Inc.
Inventor： Michael J. Bernhardt
Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
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公开(公告)号：US10084114B2
公开(公告)日：2018-09-25
申请号：US15149740
申请日：2016-05-09
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L51/52 , H01L33/38 , H01L31/0216 , H01L31/0236 , H01L33/22 , H01L33/42 , H01L33/58
CPC classification number: H01L33/38 , H01L31/02168 , H01L31/0236 , H01L33/22 , H01L33/42 , H01L33/58 , H01L2933/0091 , Y02E10/50
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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8.发明授权公开(公告)号：US09842976B2
公开(公告)日：2017-12-12
申请号：US15254483
申请日：2016-09-01
Applicant: Micron Technology, Inc.
Inventor： Michael J. Bernhardt
CPC classification number: H01L33/62 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/20 , H01L33/32 , H01L33/405 , H01L33/42 , H01L33/44 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066
Abstract: Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a lighting emitting device includes forming a light emitting structure, and depositing a barrier material, a mirror material, and a bonding material on the light emitting structure in series. The bonding material contains nickel (Ni). The method also includes placing the light emitting structure onto a silicon substrate with the bonding material in contact with the silicon substrate and annealing the light emitting structure and the silicon substrate. As a result, a nickel silicide (NiSi) material is formed at an interface between the silicon substrate and the bonding material to mechanically couple the light emitting structure to the silicon substrate.
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公开(公告)号：US11742458B2
公开(公告)日：2023-08-29
申请号：US17855593
申请日：2022-06-30
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/22 , H01L33/38 , H01L31/0216 , H01L31/0236 , H01L33/42 , H01L33/58
CPC classification number: H01L33/38 , H01L31/0236 , H01L31/02168 , H01L33/22 , H01L33/42 , H01L33/58 , H01L2933/0091 , Y02E10/50
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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公开(公告)号：US20220336705A1
公开(公告)日：2022-10-20
申请号：US17855593
申请日：2022-06-30
Applicant: Micron Technology, Inc.
Inventor： Lifang Xu , Scott D. Schellhammer , Shan Ming Mou , Michael J. Bernhardt
IPC: H01L33/38 , H01L31/0216 , H01L33/22 , H01L31/0236 , H01L33/42 , H01L33/58
Abstract: Textured optoelectronic devices and associated methods of manufacture are disclosed herein. In several embodiments, a method of manufacturing a solid state optoelectronic device can include forming a conductive transparent texturing material on a substrate. The method can further include forming a transparent conductive material on the texturing material. Upon heating the device, the texturing material causes the conductive material to grow a plurality of protuberances. The protuberances can improve current spreading and light extraction from the device.
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