Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14874189Application Date: 2015-10-02
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Publication No.: US09461002B2Publication Date: 2016-10-04
- Inventor: Jeroen Antoon Croon , Coenraad Cornelis Tak
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP14196049 20141203
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L23/552 ; H01L23/498 ; H01L29/872 ; H01L21/48 ; H01L29/205 ; H01L23/31 ; H01L23/48 ; H01L23/00
Abstract:
A semiconductor device and a method of making the same. The semiconductor device includes a semiconductor substrate mounted on a carrier. The semiconductor substrate includes a Schottky diode. The Schottky diode has an anode and a cathode. The semiconductor device also includes one or more bond wires connecting the cathode to a first electrically conductive portion of the carrier. The semiconductor device further includes one or more bond wires connecting the anode to a second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is electrically isolated from the second electrically conductive portion of the carrier. The first electrically conductive portion of the carrier is configured to provide shielding against electromagnetic interference associated with switching of the anode during operation of the device. Both the cathode and the first electrically conductive portion of the carrier are electrically isolated from a backside of the semiconductor substrate.
Public/Granted literature
- US20160163653A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
Information query
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