Invention Grant
- Patent Title: Wafer-to-wafer bonding structure
- Patent Title (中): 晶圆到晶片的接合结构
-
Application No.: US14796506Application Date: 2015-07-10
-
Publication No.: US09461007B2Publication Date: 2016-10-04
- Inventor: Jin-ho Chun , Pil-kyu Kang , Byung-lyul Park , Jae-hwa Park , Ju-il Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel & Sibley, P.A.
- Priority: KR10-2014-0087620 20140711
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/00 ; H01L23/532 ; H01L23/31 ; H01L25/00

Abstract:
A wafer-to-wafer bonding structure may include: a first wafer including a first insulating layer on a first substrate and on a first copper (Cu) pad that penetrates the first insulating layer and has portions protruding from an upper surface of the first insulating layer, and a first barrier metal layer on a lower surface and sides of the first Cu pad; a second wafer including a second insulating layer on a second substrate and on a second copper (Cu) pad that penetrates the second insulating layer, has portions protruding from an upper surface of the second insulating layer, and is bonded to the first Cu pad, and a second barrier metal layer on a lower surface and sides of the second Cu pad; and a polymer layer covering protruding sides of the first and second barrier metal layers and disposed between the first and second wafers.
Public/Granted literature
- US20160013160A1 WAFER-TO-WAFER BONDING STRUCTURE Public/Granted day:2016-01-14
Information query
IPC分类: