Invention Grant
US09461089B2 Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters
有权
制造具有背面照明的具有嵌入式滤色器的图像传感器的半导体图像传感器装置的方法
- Patent Title: Method of fabricating semiconductor image sensor device having back side illuminated image sensors with embedded color filters
- Patent Title (中): 制造具有背面照明的具有嵌入式滤色器的图像传感器的半导体图像传感器装置的方法
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Application No.: US15050819Application Date: 2016-02-23
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Publication No.: US09461089B2Publication Date: 2016-10-04
- Inventor: Chiu-Jung Chen , Chun-Hao Chou , Hsin-Chi Chen , Kuo-Cheng Lee , Volume Chien , Yung-Lung Hsu , Yun-Wei Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.
Public/Granted literature
- US20160172417A1 Semiconductor Image Sensor Device Having Back Side Illuminated Image Sensors with Embedded Color Filters Public/Granted day:2016-06-16
Information query
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