公开(公告)号：US12081866B2

公开(公告)日：2024-09-03

申请号：US18327825

申请日：2023-06-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC分类号： H04N5/232 ,  H01L27/146 ,  H04N23/10 ,  H04N23/67 ,  H04N25/13 ,  H04N25/133 ,  H04N25/702 ,  H04N25/704 ,  H04N5/369

CPC分类号： H04N23/67 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14689 ,  H04N23/10 ,  H04N25/133 ,  H04N25/134 ,  H04N25/702 ,  H04N25/704

摘要： An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

公开(公告)号：US20240063234A1

公开(公告)日：2024-02-22

申请号：US18500357

申请日：2023-11-02

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Yu Wei ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Ping-Hao Lin ,  Hsun-Ying Huang ,  Yen-Liang Lin ,  Yu Ting Kao

IPC分类号： H01L27/146

CPC分类号： H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14689 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14647 ,  H01L27/14687 ,  H01L27/14638 ,  H01L29/7827

摘要： The present disclosure relates to a CMOS image sensor, and an associated method of formation. In some embodiments, the CMOS image sensor comprises a substrate and a transfer gate disposed from a front-side surface of the substrate. The CMOS image sensor further comprises a photo detecting column disposed at one side of the transfer gate within the substrate. The photo detecting column comprises a doped sensing layer comprising one or more recessed portions along a circumference of the doped sensing layer in parallel to the front-side surface of the substrate. By forming the photo detecting column with recessed portions, a junction interface is enlarged compared to a previous p-n junction interface without recessed portions, and thus a full well capacity of the photodiode structure is improved.

公开(公告)号：US11756913B2

公开(公告)日：2023-09-12

申请号：US17841213

申请日：2022-06-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Chi Chen ,  Hsun-Ying Huang ,  Chih-Ming Lee ,  Shang-Yen Wu ,  Chih-An Yang ,  Hung-Wei Ho ,  Chao-Ching Chang ,  Tsung-Wei Huang

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/768 ,  H01L23/488

CPC分类号： H01L24/14 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/488 ,  H01L2224/0401 ,  H01L2224/13

摘要： A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.

公开(公告)号：US11706525B2

公开(公告)日：2023-07-18

申请号：US17493752

申请日：2021-10-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Yun-Wei Cheng ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Hsun-Ying Huang

IPC分类号： H04N5/232 ,  H04N23/67 ,  H01L27/146 ,  H04N23/10 ,  H04N25/133 ,  H04N25/13 ,  H04N25/702 ,  H04N25/704 ,  H04N5/369

CPC分类号： H04N23/67 ,  H01L27/1463 ,  H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14689 ,  H04N23/10 ,  H04N25/133 ,  H04N25/134 ,  H04N25/702 ,  H04N25/704

摘要： An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

公开(公告)号：US11495632B2

公开(公告)日：2022-11-08

申请号：US17007684

申请日：2020-08-31

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC分类号： H01L27/146

摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

公开(公告)号：US20190259771A1

公开(公告)日：2019-08-22

申请号：US16404454

申请日：2019-05-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chiang-Ming Chuang ,  Chien-Hsuan Liu ,  Chih-Ming Lee ,  Kun-Tsang Chuang ,  Hung-Che Liao ,  Hsin-Chi Chen

IPC分类号： H01L27/11521 ,  H01L29/06 ,  H01L29/423 ,  H01L27/11548 ,  H01L23/535 ,  H01L27/11575

摘要： A semiconductor structure includes a semiconductor substrate, at least one raised dummy feature, at least one memory cell, and at least one word line. The raised dummy feature is present on the semiconductor substrate and defines a cell region on the semiconductor substrate. The memory cell is present on the cell region. The word line is present adjacent to the memory cell.

公开(公告)号：US09799697B2

公开(公告)日：2017-10-24

申请号：US14261481

申请日：2014-04-25

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Kuo-Cheng Lee ,  Yun-Wei Cheng ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/14645 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14698

摘要： A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.

公开(公告)号：US09748301B2

公开(公告)日：2017-08-29

申请号：US14642344

申请日：2015-03-09

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

发明人： Chia-Yu Wei ,  Chin-Hsun Hsiao ,  Yi-Hsing Chu ,  Yen-Liang Lin ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC分类号： H01L27/146

CPC分类号： H01L27/1464 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14685 ,  H01L27/14687

摘要： A semiconductor structure includes a semiconductive substrate includes a first side and a second side opposite to the first side, a radiation sensing device disposed in the semiconductive substrate, an interlayer dielectric (ILD) disposed over the first side of the semiconductive substrate, and a conductive pad passing through the ILD, disposed in the semiconductive substrate and configured to couple with an interconnect structure disposed over the ILD, wherein a portion of the conductive pad is surrounded by the semiconductive substrate, and a step height is configured by a surface of the portion of the conductive pad and the second side of the semiconductive substrate.

公开(公告)号：US12068271B2

公开(公告)日：2024-08-20

申请号：US18225134

申请日：2023-07-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Hsin-Chi Chen ,  Hsun-Ying Huang ,  Chih-Ming Lee ,  Shang-Yen Wu ,  Chih-An Yang ,  Hung-Wei Ho ,  Chao-Ching Chang ,  Tsung-Wei Huang

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L23/00 ,  H01L23/488

CPC分类号： H01L24/14 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/488 ,  H01L2224/0401 ,  H01L2224/13

摘要： A semiconductor device structure, along with methods of forming such, are described. The structure includes a substrate having one or more devices formed thereon, one or more bonding pads disposed over the substrate, and a first passivation layer disposed over the one or more bonding pads. The first passivation layer includes a first passivation sublayer having a first dielectric material, a second passivation sublayer disposed over the first passivation sublayer, and the second passivation sublayer has a second dielectric material different from the first dielectric material. The first passivation layer further includes a third passivation sublayer disposed over the second passivation sublayer, and the third passivation sublayer has a third dielectric material different from the second dielectric material. At least two of the first, second, and third passivation sublayers each includes a nitride.

公开(公告)号：US20240194784A1

公开(公告)日：2024-06-13

申请号：US18584282

申请日：2024-02-22

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Gulbagh SINGH ,  Hsin-Chi Chen ,  Kun-Tsang Chuang

IPC分类号： H01L29/78 ,  H01L21/02 ,  H01L21/265 ,  H01L21/3065 ,  H01L21/762

CPC分类号： H01L29/7846 ,  H01L21/02532 ,  H01L21/26513 ,  H01L21/3065 ,  H01L21/76237

摘要： The present disclosure describes a method that mitigates the formation of facets in source/drain silicon germanium (SiGe) epitaxial layers. The method includes forming an isolation region around a semiconductor layer and a gate structure partially over the semiconductor layer and the isolation region. Disposing first photoresist structures over the gate structure, a portion of the isolation region, and a portion of the semiconductor layer and doping, with germanium (Ge), exposed portions of the semiconductor layer and exposed portions of the isolation region to form Ge-doped regions that extend from the semiconductor layer to the isolation region. The method further includes disposing second photoresist structures over the isolation region and etching exposed Ge-doped regions in the semiconductor layer to form openings, where the openings include at least one common sidewall with the Ge-doped regions in the isolation region. Finally the method includes growing a SiGe epitaxial stack in the openings.