发明授权
- 专利标题: Electronic device insulating layer, and method for producing electronic device insulating layer
- 专利标题(中): 电子器件绝缘层,以及电子器件绝缘层的制造方法
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申请号: US14380400申请日: 2013-02-26
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公开(公告)号: US09461257B2公开(公告)日: 2016-10-04
- 发明人: Isao Yahagi
- 申请人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人: SUMITOMO CHEMICAL COMPANY, LIMITED
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2012-045695 20120301
- 国际申请: PCT/JP2013/054983 WO 20130226
- 国际公布: WO2013/129406 WO 20130906
- 主分类号: H01L51/05
- IPC分类号: H01L51/05 ; H01L51/10 ; H01L51/00
摘要:
An object of the present invention is to provide an electronic device insulating layer which may improve characteristics of an electronic device. The means for solving the object is an electronic device insulating layer comprising a first insulating layer formed from a first insulating layer material and a second insulating layer formed on the first insulating layer from a second insulating layer material, the first insulating layer material being an insulating layer material comprising a photosensitive resin material (A), a tungsten (V) alkoxide (B) and a basic compound (C), the second insulating layer material being an insulating layer material comprising a polymer compound (D) which contains a repeating unit containing a cyclic ether structure and a repeating unit having an organic group capable of producing a phenolic hydroxyl group by the action of an acid.
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