Invention Grant
US09461582B2 Electrical parametric testing for back contact semiconductor solar cells
有权
背接触半导体太阳能电池的电气参数测试
- Patent Title: Electrical parametric testing for back contact semiconductor solar cells
- Patent Title (中): 背接触半导体太阳能电池的电气参数测试
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Application No.: US14479540Application Date: 2014-09-08
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Publication No.: US09461582B2Publication Date: 2016-10-04
- Inventor: Swaroop Kommera , Pawan Kapur , Mehrdad M. Moslehi
- Applicant: Solexel, Inc.
- Applicant Address: US CA Milpitas
- Assignee: Solexel, Inc.
- Current Assignee: Solexel, Inc.
- Current Assignee Address: US CA Milpitas
- Agent John Wood
- Main IPC: H01L31/068
- IPC: H01L31/068 ; H02S50/10 ; H01L21/66 ; H01L31/0224 ; G01R31/40 ; G01R27/02

Abstract:
Methods and structures for extracting at least one electric parametric value from a back contact solar cell. According to one embodiment, a first layer of electrically conductive metal having an interdigitated pattern of base electrodes and emitter electrodes is formed on the backside surface of a semiconductor solar cell substrate. An electrically insulating layer is formed on the first layer of electrically conductive metal providing electrical isolation between the first layer of electrically conductive metal and a second layer of electrically conductive metal. Vias are formed in the electrically insulating layer providing access to the first layer of electrically conductive metal. A second electrically conductive metallization layer is formed on the electrically insulating layer and contacts the first electrically conductive metal layer through the vias. An electrical parametric value is extracted from the solar cell by probing the electrically conductive metallization layer with an electrical current or voltage.
Public/Granted literature
- US20150130499A1 RESISTANCE COMPONENT EXTRACTION FOR BACK CONTACT BACK JUNCTION SOLAR CELLS Public/Granted day:2015-05-14
Information query
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