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    Electrical parametric testing for back contact semiconductor solar cells
    2.
    发明授权
    Electrical parametric testing for back contact semiconductor solar cells 有权
    背接触半导体太阳能电池的电气参数测试

    公开(公告)号：US09461582B2

    公开(公告)日：2016-10-04

    申请号：US14479540

    申请日：2014-09-08

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Mehrdad M. Moslehi

    IPC: H01L31/068 ,  H02S50/10 ,  H01L21/66 ,  H01L31/0224 ,  G01R31/40 ,  G01R27/02

    CPC classification number: H02S50/10 ,  G01R27/02 ,  H01L22/14 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/0682 ,  H02S50/00 ,  Y02E10/547

    Abstract: Methods and structures for extracting at least one electric parametric value from a back contact solar cell. According to one embodiment, a first layer of electrically conductive metal having an interdigitated pattern of base electrodes and emitter electrodes is formed on the backside surface of a semiconductor solar cell substrate. An electrically insulating layer is formed on the first layer of electrically conductive metal providing electrical isolation between the first layer of electrically conductive metal and a second layer of electrically conductive metal. Vias are formed in the electrically insulating layer providing access to the first layer of electrically conductive metal. A second electrically conductive metallization layer is formed on the electrically insulating layer and contacts the first electrically conductive metal layer through the vias. An electrical parametric value is extracted from the solar cell by probing the electrically conductive metallization layer with an electrical current or voltage.

    Abstract translation: 从背面接触太阳能电池提取至少一个电参数值的方法和结构。 根据一个实施例，在半导体太阳能电池基板的背面形成有具有基准电极和发射极电极的交错图案的第一导电金属层。 在第一导电金属层上形成电绝缘层，在第一导电金属层和第二导电金属层之间提供电隔离。 在电绝缘层中形成通孔，提供对第一层导电金属的访问。 第二导电金属化层形成在电绝缘层上，并通过通孔与第一导电金属层接触。 通过用电流或电压探测导电金属化层，从太阳能电池提取电参数值。

    Solar cell metallization
    8.
    发明授权
    Solar cell metallization 有权

    公开(公告)号：US09911875B2

    公开(公告)日：2018-03-06

    申请号：US14260272

    申请日：2014-04-23

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Yen-Sheng Su ,  Vivek Saraswat ,  Anand Deshpande ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/05 ,  H01L31/02

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

    Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.

    SOLAR CELL METALLIZATION
    10.
    发明申请
    SOLAR CELL METALLIZATION 有权
    太阳能电池金属化

    公开(公告)号：US20150068592A1

    公开(公告)日：2015-03-12

    申请号：US14260272

    申请日：2014-04-23

    Applicant: Solexel, Inc.

    Inventor： Swaroop Kommera ,  Pawan Kapur ,  Yen-Sheng Su ,  Vivek Saraswat ,  Anand Deshpande ,  Mehrdad M. Moslehi

    IPC: H01L31/02

    CPC classification number: H01L31/022441 ,  H01L31/02008 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50

    Abstract: An interdigitated back contact solar cell is provided. The solar cell comprises a solar cell substrate having a light receiving frontside and a backside comprising base and emitter regions. A first level metal (M1) layer is positioned on the substrate backside contacting the base and emitter regions. A second level metal (M2) layer is connected to the first level metal (M1) layer and comprises a base busbar and an emitter busbar. The first level metal comprises substantially orthogonal interdigitated metallization and substantially parallel interdigitated metallization positioned under and corresponding to the base and emitter busbars on the second level metal (M2). The substantially parallel interdigitated metallization of M1 collects carriers of opposite polarity of the corresponding busbar.

    Abstract translation: 提供了交错的背接触太阳能电池。 太阳能电池包括具有光接收前侧的太阳能电池基板和包括基极和发射极区域的背面。 第一级金属（M1）层位于接触基极和发射极区域的衬底背面。 第二级金属（M2）层连接到第一级金属（M1）层，并且包括基极母线和发射极母线。 第一级金属包括位于第二级金属（M2）上的基极和发射极母线之下并对应于基本上正交叉指金属化的基本上平行的叉指金属化。 M1的基本上平行的叉指金属化收集相应母线相反极性的载体。

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