Invention Grant
- Patent Title: Plasmonic interface and method of manufacturing thereof
- Patent Title (中): 等离子体界面及其制造方法
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Application No.: US13970852Application Date: 2013-08-20
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Publication No.: US09465160B2Publication Date: 2016-10-11
- Inventor: Christopher Fred Keimel , John Brian Hewgley , Juan Jose Becerra
- Applicant: General Electric Company
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Ziolkowski Patent Solutions Group, SC
- Agent Jean K. Testa
- Main IPC: G02B6/02
- IPC: G02B6/02 ; C25D11/26 ; C25D11/04 ; B32B37/12 ; B32B37/24 ; G02B6/122

Abstract:
A method of manufacturing a layered material stack that includes a plasmonic interface between a plasmonic material and optical waveguide material is disclosed. The method includes providing a substrate layer, disposing a layer of plasmonic material on the substrate layer, depositing a metal constituent of an optical waveguide material directly onto the layer of plasmonic material, and anodizing the metal constituent of the optical waveguide material to form an optically transparent oxide of the metal constituent configured to couple light into the layer of plasmonic material, with the optically transparent oxide of the metal constituent forming an optical waveguide structure.
Public/Granted literature
- US20150055924A1 PLASMONIC INTERFACE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2015-02-26
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